Power Module Design

標題欄 icon --> 收藏夾 icon --> --> Home Think more radical, new ideas for society !! Previous Next MISSION ミッション --> As global warming becomes a serious problem, reducing the emission of carbon dioxide and saving energy is an important social issue and the development of green energy technology becomes essential as well. Paradigm shift of green technologies is ongoing. Boosting energy efficiency for the infrastructure of vehicle, railroad, smart grid and etc. is indispensable. ANJET Corporation endeavours to develop semiconductors that can enhance the energy efficiency for the sustainability of the society. We work together with IC foundries in Taiwan, Japan and US to design the competitive power devices leveraging Si, SiC and GaN processes for every kind of applications.

ABOUT US 企業概要 --> Taipei ANJET Corporation --> Establishment date: September, 6th, 2019 Address: 5F-6, No. 308, Zhifu Rd., Zhongshan Dist., Taipei City 10466, Taiwan R.O.C. Capital： 390,000,000 NTD CEO： JW（呉） --> Team： Each has affluent experience of 20-30 years in Semiconductor Industry, namely Texas Instruments, Mitsubishi Elec., Renesas, and ROHM Offices: Taipei ANJET Corporation Taipei Headquarters Hsinchu R&D Center Anjet Research Lab Co., Ltd. Kyoudai Katsura Venture Plaza Tokorozawa Satellite Office Beijing Sales Business： Research and development(R&D) and sales of semiconductor component Anjet Research Lab Co., Ltd. Establishment date: December 3, 2019 CEO： Jimmy Wu --> Address: 2103,2203,2208 South Building, Kyodai-katsura Venture Plaza, 1-39 Goryo Ohara, Nishikyo-ku, Kyoto-city, kyoto-prif., 615-8245, Japan (Map) Supported by JETRO Kyoto Capital： 70,000,000 JPY Team： It consists of some expert members with experience in research and development of power semiconductor devices and modules at major semiconductor manufacturers. (Texas Instruments, ON Semiconductor, UMC, Hitachi, Mitsubishi Elec., Renesas, Panasonic, ROHM etc.) Business： Design of Semiconductor Devices PRODUCT more 製品 --> SiC SBD 650V～1700V (4A～60A) Key features Best-in-class low VF:1.35V No reverse recovery charges High surge ruggedness Temperature independent switching behavior Low cost High reliability Key technologies Advanced junction barrier schottky structure Optimum CELL Advanced termination structure thin Wafer More information SiC DMOS 650V～1700V (800mΩ～10mΩ) Key features Best-in-class low Rsp:≒3.3mΩ･cm 2 Enough break down voltage Low Cgd Low cost High reliability Key technologies Advanced DMOS self-align structure Advanced termination structure thin Wafer More information RECRUIT 招募資訊 --> Job description Company Introduction We are a fabless design company engaged in the development of cutting-edge power devices such as Si, SiC. Job